Status : Published (Under review)

This standard was last reviewed and confirmed in 2021. Therefore this version remains current.
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Abstract

ISO 14706:2014 specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 × 1010 atoms/cm2 to 1 × 1014 atoms/cm2; contamination elements with atomic surface densities from 5 × 108 atoms/cm2 to 5 × 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method.

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General information

  • Status
     : Published
    Publication date
     : 2014-08
    Stage
    : International Standard confirmed [90.93]
  • Edition
     : 2
    Number of pages
     : 25
  • Technical Committee :
    ISO/TC 201
    ICS :
    71.040.40 
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Life cycle

Sustainable Development Goals

This standard contributes to the following Sustainable Development Goals

7
Affordable and Clean Energy
9
Industry, Innovation and Infrastructure

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