This standard was last reviewed and confirmed in 2020.
Therefore this version remains current.
Abstract
PreviewISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.
It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.
It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
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Status: PublishedPublication date: 2009-04
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Edition: 1Number of pages: 19
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- ICS :
- 71.040.40 Chemical analysis
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en
| Format | Language | |
|---|---|---|
| std 1 124 | ||
| std 2 124 | Paper |
- CHF124
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