Résumé
This document specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished samples and for instruments that incorporate an Al or Mg X-ray source, a sample stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in this document, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.
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Informations générales
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État actuel: PubliéeDate de publication: 2018-11Stade: Clôture de l'examen [90.60]
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Edition: 2
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Comité technique :ISO/TC 201/SC 7ICS :71.040.40
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Cycle de vie
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Précédemment
AnnuléeISO 14701:2011
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Actuellement
PubliéeISO 14701:2018
Les normes ISO sont réexaminées tous les cinq ans
Stade: 90.60 (En cours d'examen)
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